Uniformity and Performance Characterization of GaN p-i-n Photodetectors Fabricated from 3-Inch Epitaxy
نویسندگان
چکیده
منابع مشابه
Characterization of an Mg-implanted GaN p-i-n Diode
A p-i-n diode formed by the implantation of Mg in GaN was fabricated and characterized. After implantation, Mg was activated using the symmetrical multicycle rapid thermal annealing technique with heating pulses up to 1340C. The Mg-implanted p-i-n diode exhibits rectification and low leakage currents. The realization of an Mg-implanted GaN device is a key step for future power electronic devices.
متن کاملHigh Performance GaN HEMTs on 3-inch SI-SiC Substrates
Gallium Nitride (GaN) HEMTs are the focus of intense research and development due to their potential for the realization of MMIC power amplifiers (PAs) with high gain and record levels of power delivery [1]. Much of the work in GaN HEMT development has been concentrated on performance demonstration on 2” SiC and Sapphire substrates. Multiple groups have demonstrated GaN HEMTs delivering record ...
متن کاملTunable Superlattice p-i-n Photodetectors: Characteristics, Theory, and Applications
We report on extended measurements and theory on the recently developed monolithic wavelength demultiplexer consisting of voltage tunable superlattice p-i-n photodetectors in a waveguide configuration. This includes a reduced wavelength spacing, an investigation of the polarization dependence of the crosstalk and bit-error-rate measurements for various crosstalk levels. We show that the device ...
متن کاملVelocity-Matched Distributed Photodetectors and Balanced Photodetectors with p-i-n Photodiodes
We report on the first demonstration of velocity-matched distributed photodetectors and balanced photodetectors with p-i-n photodetectors. Record-high linear dc photocurrent of 45 mA has been achieved without suffering from thermal damage, thanks to the superior power handling capability of p-i-n photodiodes. A novel fiber alignment technique has been developed to achieve high linear photocurre...
متن کاملPERFORMANCE DEPENDENCE OF LARGE-AREA SILICON p-i-n PHOTODETECTORS UPON EPITAXIAL THICKNESS
.Abstract-Large-area siliconp-i-n photodetectors with an epitaxial thickness ranging from IO-20 pm were fabricated. The photodiode bandwidth, responsivity, capacitance and dark current were characterized as a function of the epilayer thickness. The determination of these parameters is important to facilitate the designing of photodiodes in which the trade-off between various parameters need to ...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: MRS Internet Journal of Nitride Semiconductor Research
سال: 1999
ISSN: 1092-5783
DOI: 10.1557/s1092578300003458